Adolph Blicher


Biographic Note


I received the Electrical Engineer degree from the University of Toulouse, France in 1928, and the MS degree in Electronics in 1933 from the Eacut ecole in Paris, France.  After returning to my native Poland, I earned an Sc.D. degree in Physics in 1938 from the Polytechnic Institute of Warsaw.  Before World War II, I worked in industy in Poland, designing various radio components and receivers as well as some scientific instruments. After the Germans occupied part of Poland in late September 1939, my wife Anna and I escaped from Warsaw and went to the eastern part of Poland which was then under Soviet Russian occupation.  A few months later the USSR government told us to accept Russian citizenship.  We refused, and were promptly arrested as counter-revolutionaries and as such were deported to a forced labor camp in the northern Ural Mountains in Russia.  We spent the next 5 years in various parts of the USSR under extreme conditions of  privation and oppression from the Soviet authorities. After the war ended in 1945, we were able to return to Warsaw.  There I became the Technical Director of the Polish Broadcasting Company (Polskie Radio). In December 1946 I was sent to New York as the representative of that organization.  Neither I nor my wife ever returned to Poland, and in 1957 we both became U.S citizens.










Oral History – Adolph Blicher


This Oral History was developed from material supplied by Mr. Adolph Blicher

in June 2001.


My first job in American industry was at the Radio Receptor Company's Thermatron Division, producing dielectric and induction heating equipment. My job was to design high power electronic generators.  In 1954 I joined Radio Receptor's Germanium Research Department, headed by Bill Harding.  Dave DeWitt, Bill's boss, was the vice president in charge of the Germanium Product division.  Other than these two men, there were very few engineers with an adequate knowledge of semiconductor physics.  Consequently, my general background, plus the few graduate courses on transistors that I had taken at the City College of New York, proved to be very useful.


In 1954 only low frequency  alloyed p-n-p germanium transistors were available in the US, and the Radio Receptor Co. was among the very few companies that fabricated them.  Their main application at that time was in hearing aids.  Those low-frequency transistors had a gain-bandwidth product that was well below 1 MHz.  My assignment was to design and develop a p-n-p transistor with an fT above 25 MHz, adequate for use in electronic computers and radio receivers.



Go To Blicher Oral History, Page 2





COPYRIGHT © 2003 by Jack Ward.  All Rights Reserved.  http://www.transistormuseum.com/