I received the Electrical
Engineer degree from the University of Toulouse, France in 1928, and the MS
degree in Electronics in 1933 from the Eacut ecole in Paris, France. After
returning to my native Poland, I earned an Sc.D. degree in Physics in 1938
from the Polytechnic Institute of Warsaw. Before World War II, I worked in
industy in Poland, designing various radio components and receivers as well
as some scientific instruments. After the Germans occupied part of Poland
in late September 1939, my wife Anna and I escaped from Warsaw and went to
the eastern part of Poland which was then under Soviet Russian occupation.
A few months later the USSR government told us to accept Russian citizenship.
We refused, and were promptly arrested as counter-revolutionaries and as
such were deported to a forced labor camp in the northern Ural Mountains in
Russia. We spent the next 5 years in various parts of the USSR under
extreme conditions of privation and oppression from the Soviet
authorities. After the war ended in 1945, we were able to return to
Warsaw. There I became the Technical Director of the Polish Broadcasting
Company (Polskie Radio). In December 1946 I was sent to New York as the
representative of that organization. Neither I nor my wife ever returned
to Poland, and in 1957 we both became U.S citizens.
Oral History – Adolph Blicher
This Oral History was developed from material supplied
by Mr. Adolph Blicher
in June 2001.
My first job in American
industry was at the Radio Receptor Company's Thermatron Division, producing
dielectric and induction heating equipment. My job was to design high power
electronic generators. In 1954 I joined Radio Receptor's Germanium
Research Department, headed by Bill Harding. Dave DeWitt, Bill's boss, was
the vice president in charge of the Germanium Product division. Other than
these two men, there were very few engineers with an adequate knowledge of
semiconductor physics. Consequently, my general background, plus the few
graduate courses on transistors that I had taken at the City College of New
York, proved to be very useful.
In 1954 only low frequency
alloyed p-n-p germanium transistors were available in the US, and the Radio
Receptor Co. was among the very few companies that fabricated them. Their
main application at that time was in hearing aids. Those low-frequency
transistors had a gain-bandwidth product that was well below 1 MHz. My
assignment was to design and develop a p-n-p transistor with an fT above 25
MHz, adequate for use in electronic computers and radio receivers.
To Blicher Oral History, Page 2