A Transistor Museum Interview with Jack Haenichen

The Development of the 2N2222 – The Most Successful and Widely Used Transistor Ever Developed.

Oral History – Jack Haenichen (Continued)






Photos Courtesy of Wilf Corrigan.


1963 Motorola High Performance Silicon Transistor Manufacturing Process


Shown above (left) is the cover of a 1963 Motorola Condensed Catalog.  According to the catalog, “the technician is examining a new silicon high-frequency power transistor through a Carl Zeiss Ultraphot II microscope…..Magnified 125 times, this new transistor is capable of 15 watts RF output at 50 mc and is the highlight of Motorola’s new ‘communications line’ of silicon epitaxial passivated transistors”.  Shown at right above is the specific transistor die construction of the 2N2222 style transistors from this same timeframe.  The microphotograph is a magnified view of a single device, with a clear indication of the “annular ring” structure developed by Jack Haenichen.  These transistors were manufactured on Silicon Lines “SL-2, 3, 4 , 5 , 33 and 34” –  see the chart at bottom right.   The use of the annular ring process, as described by Jack in this Oral History, resulted in transistors capable of operating at higher voltages than those from other manufacturers, and helped propel Motorola into an industry leadership position.   

Go To Haenichen Oral History, Page 8


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