Recent Developments in
Transistors and Related Devices, Reprinted from Tele-Tech, December 1951,
by Dr. John S. Saby, Electronics Laboratory, General Electric Co, Syracuse,
#2,999,195, Original filed June 14, 1952. “BROAD AREA TRANSISTORS”, granted
Sept 5, 1961.
Germanium Transistors, by Dr. John S. Saby,
General Electric Review, September 1952.
Impurity Diffusion and Space Charge Layers in
“Fused-Impurity” p-n Junctions, by John S. Saby and W. C. Dulap Jr, The
Phsical Review, Vol 90, No. 4, 630-632, May 15, 1953.