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Which years did you work at
GE, which positions and at which facilities?
I started in February 1951
through September 1956 at the GE Electronics Lab at Syracuse. I was a research physicist until 1954/55
and then became Manager of the Semiconductors and Solid State Section. From 9/56 until I retired in 3/82, I was
at the GE Lighting Lab in Cleveland Ohio, with a final position of Manager
of the Lamp Phenomena Research Lab.
When and where did
transistor development begin at GE?
The point contact transistor
work (prior to my time at GE) primarily supported some limited production
for military applications, as an extension of large scale point contact
diode production at the Clyde (Central NY state) plant. When junction diodes were later made,
primarily for medium current rectifier applications, these became a major
product, also at Clyde. The Clyde
civic leaders had an upbeat billboard erected at each entrance to the town
reading “Clyde, NY – The Germanium Diode Capital of the World”. Oddly, GE located the original
semiconductor work in the Heavy Military Department, Crystal Section,
because GE’s manufacture of quartz crystals for critical military systems
involved sawing of precision cut quartz crystals.
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To Saby Oral History, Page 2
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